Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes
نویسندگان
چکیده
منابع مشابه
3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 μm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray technique...
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ژورنال
عنوان ژورنال: ECS Journal of Solid State Science and Technology
سال: 2017
ISSN: 2162-8769,2162-8777
DOI: 10.1149/2.0281710jss